Caractérisation et modélisation électrothermique non linéaire des transistors hyperfréquences de puissance « RF Si-LDMOSFETs pour l’étude de la fiabilité

Download or read book Caractérisation et modélisation électrothermique non linéaire des transistors hyperfréquences de puissance « RF Si-LDMOSFETs pour l’étude de la fiabilité written by Mouna Chetibi-RIah and published by . This book was released on 2009 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work deals with electrothermal modelling of LDMOS power transistor for the study of reliability in radar applications. In a first part, we presented the characteristics of MOS transistors, and particularly the LDMOS, compared to bipolar transistors. We studied the influence of the temperature rise in semiconductor components on their relevant physical quantities. Finally, we explained the basics of the reliability of power transistors and we discussed ways and mechanisms of failure and the main laws of acceleration of failure (temperature, current density, injection of hot carriers). In a second part, the whole process of extraction of electrothermal model of an LDMOS is presented in detail. This study was based on the MET model deemed most appropriate for RF LDMOS power transistor. The reliability bench used to perform accelerated ageing tests has been described in chapter three. The goal is the understanding of the degradation of the reliability of such components in pulsed mode. Thus, all the electrical and RF parameters drifts after accelerated ageing tests have been studied and discussed.