Designing Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by ARPES

Designing Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by ARPES
Author :
Publisher :
Total Pages : 0
Release :
ISBN-10 : 9811918759
ISBN-13 : 9789811918759
Rating : 4/5 (59 Downloads)

Book Synopsis Designing Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by ARPES by : Ryo Noguchi

Download or read book Designing Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by ARPES written by Ryo Noguchi and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the observation and the control of spin-polarized electrons in Rashba thin films and topological insulators, including the first observations of a weak topological insulator (WTI) and a higher-order topological insulator (HOTI) in bismuth halides. It begins with a general review of electronic structures at the solid surface and mentions that an electron spin at a surface is polarized due to the Rashba effect or topological insulator states with strong spin-orbit coupling. Subsequently it describes the experimental techniques used to study these effects, that is, angle-resolved photoemission spectroscopy (ARPES). Further it moves its focus onto the experimental investigations, in which mainly two different systems-noble metal thin films with the Rashba effects and bismuth halides topological insulators-are used. The study of the first system discusses the role of wavefunctions in spin-splitting and demonstrates a scaling law for the Rashba effect in quantum well films for the first time. High-resolution spin-resolved ARPES plays a vital role in systematically trace the thickness-evolution of the effect. The study of the latter material is the first experimental demonstration of both a WTI and HOTI state in bismuth iodide and bismuth bromide, respectively. Importantly, nano-ARPES with high spatial resolution is used to confirm the topological surface states on the side surface of the crystal, which is the hallmark of WTIs. The description of the basic and recently-developed ARPES technique with spin-resolution or spatial-resolution, essential in investigating spin-polarized electrons at a crystal surface, makes the book a valuable source for researchers not only in surface physics or topological materials but also in spintronics and other condensed-matter physics.


Designing Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by ARPES Related Books

Designing Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by ARPES
Language: en
Pages: 0
Authors: Ryo Noguchi
Categories:
Type: BOOK - Published: 2022 - Publisher:

DOWNLOAD EBOOK

This book presents the observation and the control of spin-polarized electrons in Rashba thin films and topological insulators, including the first observations
Designing Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by ARPES
Language: en
Pages: 139
Authors: Ryo Noguchi
Categories: Science
Type: BOOK - Published: 2022-04-25 - Publisher: Springer Nature

DOWNLOAD EBOOK

This book presents the observation and the control of spin-polarized electrons in Rashba thin films and topological insulators, including the first observations
Oxide Electronics
Language: en
Pages: 628
Authors: Asim K. Ray
Categories: Technology & Engineering
Type: BOOK - Published: 2021-04-12 - Publisher: John Wiley & Sons

DOWNLOAD EBOOK

Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics deli
Graphdiyne
Language: en
Pages: 404
Authors: Yuliang Li
Categories: Technology & Engineering
Type: BOOK - Published: 2022-01-10 - Publisher: John Wiley & Sons

DOWNLOAD EBOOK

Graphdiyne Discover the most cutting-edge developments in the study of graphdiyne from a pioneer of the field In Graphdiyne: Fundamentals and Applications in Re
Molecular Beam Epitaxy
Language: en
Pages: 795
Authors: Robin F.C. Farrow
Categories: Technology & Engineering
Type: BOOK - Published: 1995-12-31 - Publisher: Elsevier

DOWNLOAD EBOOK

In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both