Electron Spin Resonance and Radiation Effects in MOS Devices

Download or read book Electron Spin Resonance and Radiation Effects in MOS Devices written by and published by . This book was released on 1990 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: The basic mechanisms were explored of radiation damage in metal/ oxide/silicon (MOS) field effect transistors (MOSFET's) with a combination of electron spin resonance (ESR) and electrical measurements. The major focus has been develop a new and much more sensitive ESR technique called spin dependent recombination (SDR) to study radiation damage in MOSFET's. Keywords: Metal oxide semiconductors; Field effect transistors; Electron spin resonance; Radiation effects.