Evaluation and Modelling of Hot-carrier Induced Degradation in MOSFETs by Gate-to-drain Capacitance Measurement
| Author | : Ramin Ghodsi |
| Publisher | : |
| Total Pages | : 220 |
| Release | : 1994 |
| ISBN-10 | : OCLC:37402967 |
| ISBN-13 | : |
| Rating | : 4/5 (67 Downloads) |
Book Synopsis Evaluation and Modelling of Hot-carrier Induced Degradation in MOSFETs by Gate-to-drain Capacitance Measurement by : Ramin Ghodsi
Download or read book Evaluation and Modelling of Hot-carrier Induced Degradation in MOSFETs by Gate-to-drain Capacitance Measurement written by Ramin Ghodsi and published by . This book was released on 1994 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
