Evaluation of Radiation Damage to Metal-Oxide-Semiconductor (MOS) Devices

Download or read book Evaluation of Radiation Damage to Metal-Oxide-Semiconductor (MOS) Devices written by GEO-CENTERS INC NEWTON UPPER FALLS MA. and published by . This book was released on 1982 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of these experiments was to provide qualitative and quantitative information on the effects of various hydrogen and nitrogen annealing treatments on the radiation hardness, or resistivity to damage, of MOS capacitors. Toward this end, the following tasks were performed: Construction of capacitor TO-5 packages for device evaluation; The experimental determination of the 1 MHz capacitance-voltage bias curves for both the pre- and post-irradiated capacitors; Evaluation of the change in Flat Band Voltage (Delta V sub fb) for the pre- and post-radiation stressed devices; Compilation of all 1 MHz data for cataloging purposes and the establishment of a benchmark for the new computer automated test system; and Reported data to the Contracting Officer's Technical Representative (COTR) on a case-by-case basis, as time was of the essence.